By Rodnay Zaks
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6. Present-day instruments employed in electron scattering experiments (HREELS, Panel IX: Chap. 4) achieve a resolution ΔE/E of 10−3 – 10−4 . Decreasing the slit width to improve the resolution is only possible within certain limits, since it simultaneously reduces the transmitted current. This deterioration is mainly due to space-charge eﬀects. Electrons moving parallel to one another through the analyzer interact with each other via their Coulomb repulsion and their mutually induced magnetic ﬁeld (due to the current).
Depending on the crystal material, the mechanical pressure can be applied continuously with a pressure screw although, in other cases, good ﬂat cleaves are only obtained when a pressure shock is transferred to the wedges by a hammer. e. after one run of experiments the UHV system has to be opened and a new sample must be mounted. A modiﬁcation of the double-wedge technique is often applied in cases where multiple cleavages from one single crystal bar are desirable to enable more than one set of experiments within a single UHV cycle.
G. P into GaAs, it is possible to change the direct semiconductor GaAs step by step through diﬀerent GaAs1−x Px compositions into the indirect semiconductor GaP. 13]. 4 Evaporation and Molecular Beam Epitaxy (MBE) 51 Fig. 11. 13] the compound switches from a direct to an indirect semiconductor, the conduction band minimum at the symmetry point X of the Brillouin zone drops to a lower energy than the Γ -point (k = 0) minimum. It is evident that MBE is an ideal experimental technique to grow such ternary or even quaternary compounds in a well deﬁned manner – just by controlling the ﬂux rate of the diﬀerent compound substituents being evaporated from diﬀerent crucibles.