By Naruo Sasaki, Masaru Tsukada (auth.), Professor Toshio Sakurai, Professor Yousuke Watanabe (eds.)
This ebook covers a number of of an important themes of present curiosity within the leading edge of scanning probe microscopy. those contain a practical conception of atom-resolving atomic strength microscopy (AFM), basics of MBE progress of III-V compound semiconductors and atomic manipulation for destiny single-electron devices.
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If the tip approaches the surface from a very distant region, a discontinuous rise in cantilever oscillation energy should take place, indicating a sudden onset of the dynamic touching mode. Within the model and parameter range we have investigated, the resonance peak of the spectrum always shifted toward the higher frequency side. This is quite reasonable for the hard wall model or even for the LennardJones potential model assumed only for a single tip apex atom. This is because the range of the attractive tip-surface interaction is rather narrow and the repulsive collision between tip and surface has a dominant effect on cantilever motion.
The other is the As model , which has two As dimers in the top layer and two Ga dimers in the second layer in a unit cell. The STM image of the Ga-rich (4x 2) surface shows that the faint features are positioned in between the brighter features along the  direction [15,16]. If the faint and brighter features are identified as Ga and As atoms, respectively, the STM image cannot be explained readily by the Ga model since the Ga and As atoms should line up in the Ga model. If STM simply mapped the surface atomic geometry, this would be true.
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