A Textbook of Electrical Technology Volume IV - Electronic by B.L. Theraja, R. S. Sedha

By B.L. Theraja, R. S. Sedha

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Also, calculate intrinsic resistivity of silicon. 33 × 10 g/m , atomic Wt. 05 m /V-s. 19 3 nA = Avogadro’s No. × density/atomic Wt. 5 × 1016 Solution. 3 × 10 Si atoms for each electron-hole pair. 10. Silicon is doped with acceptor atoms to a density of 10 m . If it is assumed that all acceptor centres are ionized, calculate the conductivity of the extrinsic silicon. 05 m . (Electronic Devices & Circuits, Pune Univ. 1992) Solution. The minority carrier density can be found from the equation given in Art.

P-N Junction It is possible to manufacture a single piece of a semiconductor material half of which is doped by P-type impurity and the other half by N-type impurity as shown in Fig. 32. The plane dividing the two zones is called junction. Theoretically, junction plane is assumed to lie where the density of donors and acceptors is equal. The P-N junction is fundamental to the operation of diodes, transistors and other solid-statedevices. Let us see if anything unusual happens at the junction. It is found Fig.

The P-N junction is fundamental to the operation of diodes, transistors and other solid-statedevices. Let us see if anything unusual happens at the junction. It is found Fig. 32 that following three phenomena take place : 1. A thin depletion layer or region (also called space-charge region or transition region) is established on both sides of the junction and is so called −6 because it is depleted of free charge carriers. Its thickness is about 10 m. 2. A barrier potential or junction potential is developed across the junction.

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